FZT857TA
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- Mfr.Part #
- FZT857TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 3.5A SOT223-3
- Stock
- 717
- In Stock ：
- 717
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Max Power Dissipation :
- 3W
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Max Collector Current :
- 3.5A
- Package / Case :
- TO-261-4, TO-261AA
- Termination :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 80MHz
- Terminal Form :
- Gull wing
- Power Dissipation :
- 3W
- Base Part Number :
- FZT857
- JESD-30 Code :
- R-PDSO-G4
- Pbfree Code :
- No
- Frequency :
- 80MHz
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 300V
- Published :
- 2006
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 300V
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Length :
- 6.7mm
- Width :
- 3.7mm
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Transition Frequency :
- 80MHz
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current Rating :
- 3.5A
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 345mV @ 600mA, 3.5A
- Collector Base Voltage (VCBO) :
- 350V
- Collector Emitter Saturation Voltage :
- 345mV
- Height :
- 1.65mm
- Factory Lead Time :
- 15 Weeks
- Continuous Collector Current :
- 3.5A
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- hFE Min :
- 100
- Voltage - Rated DC :
- 300V
- Datasheets
- FZT857TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT857TA Overview
This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 345mV.A VCE saturation (Max) of 345mV @ 600mA, 3.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 3.5A volts is possible.
FZT857TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 345mV
the vce saturation(Max) is 345mV @ 600mA, 3.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3.5A
a transition frequency of 80MHz
FZT857TA Applications
There are a lot of Diodes Incorporated
FZT857TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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