FZT796ATA
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- Mfr.Part #
- FZT796ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 0.5A SOT223-3
- Stock
- 1,018
- In Stock ：
- 1,018
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 20mA, 200mA
- Height :
- 1.65mm
- Max Collector Current :
- 500mA
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Current Rating :
- -500mA
- Frequency :
- 100MHz
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 10V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2W
- Length :
- 6.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- -500mA
- Collector Base Voltage (VCBO) :
- 200V
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- FZT796
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.7mm
- Published :
- 2000
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- -300mV
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 200V
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 200V
- Max Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -200V
- Datasheets
- FZT796ATA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT796ATA Overview
DC current gain in this device equals 300 @ 10mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 20mA, 200mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 200V volts.In extreme cases, the collector current can be as low as 500mA volts.
FZT796ATA Features
the DC current gain for this device is 300 @ 10mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 20mA, 200mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 100MHz
FZT796ATA Applications
There are a lot of Diodes Incorporated
FZT796ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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