FZT751QTA

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Mfr.Part #
FZT751QTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 3A SOT223-3
Stock
8,155
In Stock :
8,155

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Dual
Max Power Dissipation :
3W
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
SWITCHING
Transition Frequency :
140MHz
Mount :
Surface Mount
Reference Standard :
AEC-Q101
Additional Feature :
High Reliability
Collector Emitter Voltage (VCEO) :
600mV
Frequency - Transition :
140MHz
Package / Case :
TO-261-4, TO-261AA
Power - Max :
3W
Vce Saturation (Max) @ Ib, Ic :
600mV @ 300mA, 3A
Number of Elements :
1
Pbfree Code :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 2V
Published :
2010
Polarity/Channel Type :
PNP
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Packaging :
Tape and Reel (TR)
Configuration :
Single
Factory Lead Time :
12 Weeks
Number of Terminations :
4
JESD-609 Code :
e3
Max Collector Current :
3A
Collector Emitter Breakdown Voltage :
60V
Max Breakdown Voltage :
60V
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Terminal Finish :
Matte Tin (Sn)
Transistor Type :
PNP
Number of Pins :
4
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
Datasheets
FZT751QTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT751QTA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, FZT751QTA pinout, FZT751QTA datasheet PDF, FZT751QTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT751QTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FZT751QTA


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

FZT751QTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.A transition frequency of 140MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 3A volts at its maximum.

FZT751QTA Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
a transition frequency of 140MHz


FZT751QTA Applications


There are a lot of Diodes Incorporated
FZT751QTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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