FZT696BTA
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- Mfr.Part #
- FZT696BTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 180V 0.5A SOT223-3
- Stock
- 19,166
- In Stock ：
- 19,166
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 180V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 500mA
- JESD-30 Code :
- R-PDSO-G4
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 200mA
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Factory Lead Time :
- 16 Weeks
- Base Part Number :
- FZT696
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 500mA
- Pbfree Code :
- No
- Gain Bandwidth Product :
- 130MHz
- Frequency - Transition :
- 70MHz
- Number of Terminations :
- 4
- Voltage - Rated DC :
- 180V
- Collector Emitter Breakdown Voltage :
- 180V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 200mA 5V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 2W
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Weight :
- 7.994566mg
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Transition Frequency :
- 70MHz
- Collector Emitter Voltage (VCEO) :
- 180V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 250mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.7mm
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Width :
- 3.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 180V
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- FZT696BTA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT696BTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 200mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 70MHz.Single BJT transistor can take a breakdown input voltage of 180V volts.During maximum operation, collector current can be as low as 500mA volts.
FZT696BTA Features
the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
FZT696BTA Applications
There are a lot of Diodes Incorporated
FZT696BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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