FZT655TA
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- Mfr.Part #
- FZT655TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A SOT223-3
- Stock
- 48,451
- In Stock ：
- 48,451
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 30MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 150V
- Transistor Element Material :
- SILICON
- Weight :
- 7.994566mg
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- FZT655
- Terminal Position :
- Dual
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 2W
- Published :
- 2006
- Terminal Form :
- Gull wing
- Pbfree Code :
- No
- Transistor Type :
- NPN
- Number of Terminations :
- 4
- Packaging :
- Cut Tape (CT)
- Collector Emitter Saturation Voltage :
- 180mV
- Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Length :
- 6.7mm
- Collector Emitter Breakdown Voltage :
- 150V
- Transition Frequency :
- 30MHz
- Collector Base Voltage (VCBO) :
- 150V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Width :
- 3.7mm
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Height :
- 1.65mm
- Voltage - Rated DC :
- 150V
- Current Rating :
- 1A
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 30MHz
- Voltage :
- 150V
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 150V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Continuous Collector Current :
- 1A
- Datasheets
- FZT655TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT655TA Overview
This device has a DC current gain of 50 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 180mV.A VCE saturation (Max) of 500mV @ 200mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 30MHz.A breakdown input voltage of 150V volts can be used.A maximum collector current of 1A volts is possible.
FZT655TA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 30MHz
FZT655TA Applications
There are a lot of Diodes Incorporated
FZT655TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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