FZ800R33KL2CB5NOSA1

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Mfr.Part #
FZ800R33KL2CB5NOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 3300V 1500A 9800W
Stock
15,456
In Stock :
15,456

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Input :
Standard
JESD-30 Code :
R-XUFM-X7
Mount :
Surface Mount
Polarity/Channel Type :
N-Channel
Number of Elements :
2
Power - Max :
9800W
Terminal Form :
UNSPECIFIED
Max Collector Current :
1.5kA
Voltage - Collector Emitter Breakdown (Max) :
3300V
Vce(on) (Max) @ Vge, Ic :
3.65V @ 15V, 800A
RoHS Status :
Non-RoHS Compliant
Current - Collector (Ic) (Max) :
1500A
Input Capacitance :
97nF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Published :
2013
Mounting Type :
Chassis Mount
Turn Off Time-Nom (toff) :
4250 ns
Collector Emitter Breakdown Voltage :
3.3kV
Transistor Application :
POWER CONTROL
NTC Thermistor :
No
Current - Collector Cutoff (Max) :
5mA
Terminal Position :
UPPER
Configuration :
COMPLEX
Collector Emitter Voltage (VCEO) :
3.65V
Package / Case :
Module
Turn On Time :
1400 ns
Operating Temperature :
-40°C~125°C TJ
Input Capacitance (Cies) @ Vce :
97nF @ 25V
Max Power Dissipation :
9.8kW
Case Connection :
Isolated
Number of Terminations :
7
Introducing Transistors - IGBTs - Modules Infineon Technologies FZ800R33KL2CB5NOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:Module, Operating Temperature:-40°C~125°C TJ, Number of Terminations:7, FZ800R33KL2CB5NOSA1 pinout, FZ800R33KL2CB5NOSA1 datasheet PDF, FZ800R33KL2CB5NOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FZ800R33KL2CB5NOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FZ800R33KL2CB5NOSA1


FZ800R33KL2CB5NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FZ800R33KL2CB5NOSA1                Description

 

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

 

FZ800R33KL2CB5NOSA1                Features

? 500-mA low-dropout regulator with enable

? Available in fixed and adjustable (1.2-V to 5.5-V)

versions

? High PSRR (50 dB at 10 kHz)

? Ultralow noise (33 μVRMS, TPS79530)

? Fast start-up time (50 μs)

? Stable with a 1-μF ceramic capacitor

? Excellent load and line transient response

? Low dropout voltage (110 mV at full load,

TPS79530)

? 6-pin SOT-223 and 3-mm × 3-mm VSON

packages

 

FZ800R33KL2CB5NOSA1                 Applications

? RF: VCOs, receivers, ADCs

? Audio

? Bluetooth?

, wireless LAN

 

 


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