FS75R07W2E3B11ABOMA1

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Mfr.Part #
FS75R07W2E3B11ABOMA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULES
Stock
10
In Stock :
10

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Number of Terminations :
18
Max Operating Temperature :
150°C
Halogen Free :
Not Halogen Free
Polarity/Channel Type :
N-Channel
Package / Case :
Module
Max Repetitive Reverse Voltage (Vrrm) :
650V
RoHS Status :
ROHS3 Compliant
Turn On Time :
44 ns
Max Power Dissipation :
275W
Mount :
Screw
Case Connection :
Isolated
Configuration :
COMPLEX
Factory Lead Time :
39 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
650V
Lead Free :
Contains Lead
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
95A
Terminal Position :
UPPER
Number of Elements :
6
Turn Off Time-Nom (toff) :
258 ns
Collector Emitter Saturation Voltage :
1.7V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
POWER CONTROL
Min Operating Temperature :
-40°C
Number of Pins :
18
Published :
2006
Terminal Form :
UNSPECIFIED
Introducing Transistors - IGBTs - Modules Infineon Technologies FS75R07W2E3B11ABOMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:18, Package / Case:Module, Number of Pins:18, FS75R07W2E3B11ABOMA1 pinout, FS75R07W2E3B11ABOMA1 datasheet PDF, FS75R07W2E3B11ABOMA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FS75R07W2E3B11ABOMA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FS75R07W2E3B11ABOMA1


FS75R07W2E3B11ABOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FS75R07W2E3B11ABOMA1                            Description



The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

 

 

FS75R07W2E3B11ABOMA1                          Applications

·Hybrid Electrical Vehicles(H)EV

·Air Conditioning

·Motor Drives

Electrical Features

·Increased blocking voltage capabilityto650V

·Low Switching Losses

·Low VCEsat

·Trench IGBT 3

FS75R07W2E3B11ABOMA1                         Features

·Al2O3 Substrate with Low Thermal Resistance

·High Power Density

Integrated NTC temperature sensor Compact design

·PressFIT Contact Technology

·RoHS compliant

·Rugged mounting due to integrated mounting clamps

 


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