FS500R17OE4DB81BPSA1

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Mfr.Part #
FS500R17OE4DB81BPSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
MEDIUM POWER ECONO
Stock
4
In Stock :
4

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Collector Emitter Saturation Voltage :
1.95V
NTC Thermistor :
yes
Operating Temperature :
-40°C ~ 150°C (TJ)
Product Type :
IGBT Modules
Manufacturer :
Infineon
Minimum Operating Temperature :
- 40 C
Base Product Number :
FS500R17
Supplier Device Package :
AG-ECONOPP
Power Dissipation :
-
Power - Max :
20 mW
Mounting Type :
Chassis Mount
Maximum Operating Temperature :
+ 150 C
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 500A
Voltage - Collector Emitter Breakdown (Max) :
1700 V
Input :
Standard
Current - Collector Cutoff (Max) :
3 mA
IGBT Type :
Trench Field Stop
Mounting Style :
Screw
Input Capacitance (Cies) @ Vce :
40 nF @ 25 V
Product Status :
Active
Product Category :
IGBT Modules
Current - Collector (Ic) (Max) :
500 A
Product :
IGBT Silicon Modules
Packaging :
Tray
Series :
EconoPACK?+
Technology :
Si
RoHS :
Details
Configuration :
Three Phase Inverter
Package :
Tray
Tradename :
TRENCHSTOP EconoPACK PressFIT
Subcategory :
IGBTs
Continuous Collector Current :
500A
Package / Case :
Module
Brand :
Infineon Technologies
Introducing Transistors - IGBTs - Modules Infineon Technologies FS500R17OE4DB81BPSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C ~ 150°C (TJ), Mounting Type:Chassis Mount, Package / Case:Module, FS500R17OE4DB81BPSA1 pinout, FS500R17OE4DB81BPSA1 datasheet PDF, FS500R17OE4DB81BPSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FS500R17OE4DB81BPSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FS500R17OE4DB81BPSA1


FS500R17OE4DB81BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

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