FQPF13N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

110mOhm

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Width :

4.7mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Threshold Voltage :

2.5V

Weight :

2.27g

Rds On (Max) @ Id, Vgs :

110m Ω @ 5A, 10V

Pbfree Code :

yes

Number of Pins :

3

Published :

2001

Power Dissipation-Max :

24W Tc

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Number of Elements :

1

Voltage - Rated DC :

60V

Current Rating :

13.6A

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

90 mJ

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

40 ns

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Power Dissipation :

24W

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Height :

9.19mm

Rise Time :

90ns

Length :

10.16mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 5V

Lead Free :

Lead Free

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

20 ns

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A

Mount :

Through Hole

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Pulsed Drain Current-Max (IDM) :

40A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V