FQP9N50C
- Mfr.Part #
- FQP9N50C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A TO220-3
- Stock
- 56,096
- In Stock :
- 56,096
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 64 ns
- Dual Supply Voltage :
- 500V
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 9A
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4.5A, 10V
- Rise Time :
- 65ns
- Nominal Vgs :
- 4 V
- Qualification Status :
- Not Qualified
- Current Rating :
- 9A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 9A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 135W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- QFET®
- Published :
- 2003
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Packaging :
- Tube
- Voltage - Rated DC :
- 500V
- Drain-source On Resistance-Max :
- 0.8Ohm
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Weight :
- 1.8g
- Power Dissipation :
- 135W
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 93 ns
- Terminal Finish :
- Tin (Sn)
- Termination :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Datasheets
- FQP9N50C

N-Channel Tube 800m Ω @ 4.5A, 10V ±30V 1030pF @ 25V 35nC @ 10V TO-220-3
FQP9N50C Description
These N-Channel enhancement mode power field effect transistors FQP9N50C are produced using Fairchilds proprietary planarstnpe. DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance. provide supenor switching berormance. and withstand high energy pulse in the avalanche and commutaton mode.These ceces are wel l suited for hi gh efficiency switched made power supplies , active power factor correction and electronic lamp ballasts based on half bridge topology.
FQP9N50C Features
·9A500VRpson)=800mΩ(Max.)@VGs=10V Ip=4.5A
·Low Gate Charge(Typ.28nC)
·Low Crss(Typ.24 pF)
·100% Avalanche Tested
FQP9N50C Applications
H i gh efficiency switched made power supplies
active power factor correction
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