FQP85N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

160W Tc

Resistance :

10MOhm

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Number of Terminations :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Turn-Off Delay Time :

175 ns

Current :

85A

Threshold Voltage :

4V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Length :

10.1mm

Published :

2013

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Tube

Factory Lead Time :

5 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Continuous Drain Current (ID) :

85A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Dual Supply Voltage :

60V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Mount :

Through Hole

Qualification Status :

Not Qualified

Width :

4.7mm

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

10m Ω @ 42.5A, 10V

Fall Time (Typ) :

170 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

40 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

4.535924g

Number of Pins :

3

JESD-609 Code :

e3

Voltage :

60V

Current Rating :

85A

Voltage - Rated DC :

60V

Power Dissipation :

160W

Height :

9.4mm

Mounting Type :

Through Hole

Series :

QFET®

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

4120pF @ 25V

Rise Time :

230ns