FQP7N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

9.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Rise Time :

100ns

Power Dissipation :

167W

ECCN Code :

EAR99

Element Configuration :

Single

Length :

10.1mm

Turn On Delay Time :

35 ns

Factory Lead Time :

4 Weeks

Number of Pins :

3

Nominal Vgs :

5 V

Termination :

Through Hole

Continuous Drain Current (ID) :

6.6A

Pbfree Code :

yes

FET Type :

N-Channel

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

580 mJ

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.3A, 10V

Width :

4.7mm

Qualification Status :

Not Qualified

Current Rating :

6.6A

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

26.4A

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation-Max :

167W Tc

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Weight :

1.8g

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Resistance :

1.5Ohm

Mounting Type :

Through Hole

Threshold Voltage :

5V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

800V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Voltage - Rated DC :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

60 ns

Dual Supply Voltage :

800V

Package / Case :

TO-220-3