FQP70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

160 ns

Operating Mode :

ENHANCEMENT MODE

Width :

4.7mm

Turn-Off Delay Time :

130 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

TO-220-3

Weight :

1.8g

Series :

QFET®

Packaging :

Tube

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

57A

Current Rating :

57A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

23mOhm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

30 ns

FET Type :

N-Channel

Element Configuration :

Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

Power Dissipation :

160W

Number of Elements :

1

Rise Time :

470ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Vgs (Max) :

±25V

Length :

10.1mm

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Factory Lead Time :

15 Weeks

Pulsed Drain Current-Max (IDM) :

228A

Height :

9.4mm

Transistor Element Material :

SILICON

Published :

2000

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

ECCN Code :

EAR99

Power Dissipation-Max :

160W Tc

Gate to Source Voltage (Vgs) :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

23m Ω @ 28.5A, 10V

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~175°C TJ