FQP6N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Packaging :

Tube

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

5.5A

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 25V

Transistor Element Material :

SILICON

Factory Lead Time :

7 Weeks

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

158W Tc

HTS Code :

8541.29.00.95

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

800V

Series :

QFET®

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

680 mJ

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.75A, 10V

DS Breakdown Voltage-Min :

800V

Published :

2003

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

22A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA