FQP5N80

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Mfr.Part #
FQP5N80
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 4.8A TO220-3
Stock
31,628
In Stock :
31,628

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Qualification Status :
COMMERCIAL
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
140W Tc
Drain to Source Voltage (Vdss) :
800V
Pbfree Code :
yes
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Transistor Application :
SWITCHING
Terminal Position :
Single
JEDEC-95 Code :
TO-220AB
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
590 mJ
Vgs (Max) :
±30V
Terminal Finish :
MATTE TIN
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Pin Count :
3
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
2.6 Ω @ 2.4A, 10V
DS Breakdown Voltage-Min :
800V
Package / Case :
TO-220-3
Pulsed Drain Current-Max (IDM) :
19.2A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
4.8A Tc
Drain Current-Max (Abs) (ID) :
4.8A
Input Capacitance (Ciss) (Max) @ Vds :
1.25pF @ 25V
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
Not Applicable
Reach Compliance Code :
Unknown
Series :
QFET®
Mounting Type :
Through Hole
Datasheets
FQP5N80
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP5N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, FQP5N80 pinout, FQP5N80 datasheet PDF, FQP5N80 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP5N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQP5N80


N-Channel Tube 2.6 Ω @ 2.4A, 10V ±30V 1.25pF @ 25V 33nC @ 10V 800V TO-220-3

FQP5N80 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 590 mJ.The maximum input capacitance of this device is 1.25pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4.8A.There is no pulsed drain current maximum for this device based on its rated peak drain current 19.2A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FQP5N80 Features


the avalanche energy rating (Eas) is 590 mJ
based on its rated peak drain current 19.2A.
a 800V drain to source voltage (Vdss)


FQP5N80 Applications


There are a lot of Rochester Electronics, LLC
FQP5N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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