FQP5N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

REACH SVHC :

No SVHC

Current Rating :

4.5A

Weight :

1.8g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Mount :

Through Hole

Resistance :

2.5Ohm

JESD-609 Code :

e3

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Turn-Off Delay Time :

38 ns

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

100W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

FET Type :

N-Channel

Voltage - Rated DC :

600V

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

600V

Published :

2013

Rise Time :

42ns

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Threshold Voltage :

4V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Pbfree Code :

yes

Width :

4.7mm

Operating Temperature :

-55°C~150°C TJ

Length :

10.1mm

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

4.5A

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Power Dissipation :

100W

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Pins :

3

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Height :

9.4mm

Radiation Hardening :

No

Lead Free :

Lead Free

Series :

QFET®

Fall Time (Typ) :

46 ns