FQP2N90

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Mfr.Part #
FQP2N90
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 900V 2.2A TO220-3
Stock
1,834
In Stock :
1,834

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Element Configuration :
Single
Factory Lead Time :
5 Weeks
Number of Terminations :
3
Current Rating :
2.2A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Rise Time :
35ns
Vgs (Max) :
±30V
FET Type :
N-Channel
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
7.2 Ω @ 1.1A, 10V
Turn-Off Delay Time :
20 ns
Packaging :
Tube
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
JEDEC-95 Code :
TO-220AB
Pulsed Drain Current-Max (IDM) :
8.8A
Published :
2000
Transistor Element Material :
SILICON
Width :
4.7mm
Continuous Drain Current (ID) :
2.2A
Fall Time (Typ) :
30 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
900V
Contact Plating :
Tin
Threshold Voltage :
5V
Current - Continuous Drain (Id) @ 25°C :
2.2A Tc
Mounting Type :
Through Hole
Length :
10.1mm
Vgs(th) (Max) @ Id :
5V @ 250μA
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Turn On Delay Time :
15 ns
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
85W Tc
Qualification Status :
Not Qualified
Series :
QFET®
Weight :
1.8g
Power Dissipation :
85W
Height :
9.4mm
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
500pF @ 25V
Voltage - Rated DC :
900V
Package / Case :
TO-220-3
Number of Elements :
1
Resistance :
7.2mOhm
Datasheets
FQP2N90
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP2N90 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, FQP2N90 pinout, FQP2N90 datasheet PDF, FQP2N90 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP2N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP2N90


N-Channel Tube 7.2 Ω @ 1.1A, 10V ±30V 500pF @ 25V 15nC @ 10V TO-220-3

FQP2N90 Description


Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.



FQP2N90 Features


  • RDS(on) = 7.2 Q (Max.) @VGS=10V lD = 1.1 A, 2.2 A, 900 V

  • Small Gate Fee (Typ. 12 nC)

  • High Crs (Typ. 5.5 pF)

  • Complete Avalanche Testing



FQP2N90 Applications


Switching applications


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