FQP17N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Turn On Delay Time :

40 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Number of Elements :

1

Number of Terminations :

3

Fall Time (Typ) :

105 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

270m Ω @ 8A, 10V

RoHS Status :

ROHS3 Compliant

Resistance :

270mOhm

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Radiation Hardening :

No

Nominal Vgs :

5 V

Factory Lead Time :

5 Weeks

Weight :

1.8g

Series :

QFET®

Power Dissipation :

170W

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JEDEC-95 Code :

TO-220AB

Width :

4.7mm

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs (Max) :

±30V

Current Rating :

16A

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

64A

Threshold Voltage :

5V

Height :

9.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Packaging :

Tube

FET Type :

N-Channel

Package / Case :

TO-220-3

Power Dissipation-Max :

170W Tc

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

90 ns

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

16A

Length :

10.1mm

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Rise Time :

185ns

Drain to Source Breakdown Voltage :

400V

JESD-609 Code :

e3

Voltage - Rated DC :

400V