FQP14N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

600 mJ

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.2A, 10V

Voltage - Rated DC :

300V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

300V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2000

Fall Time (Typ) :

70 ns

Continuous Drain Current (ID) :

14.4A

Turn On Delay Time :

22 ns

Qualification Status :

Not Qualified

Power Dissipation :

147W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

9.4mm

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Turn-Off Delay Time :

45 ns

Width :

4.7mm

ECCN Code :

EAR99

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Drain-source On Resistance-Max :

0.29Ohm

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

147W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

14.4A

FET Type :

N-Channel

Number of Pins :

3

Number of Elements :

1

Element Configuration :

Single

Rise Time :

145ns

Pulsed Drain Current-Max (IDM) :

57.6A

Current - Continuous Drain (Id) @ 25°C :

14.4A Tc

Number of Terminations :

3

Factory Lead Time :

11 Weeks

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Length :

10.1mm

Mounting Type :

Through Hole

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Weight :

1.8g

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE