FQNL2N50BTA
- Mfr.Part #
- FQNL2N50BTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 0
- Stock
- 20,623
- In Stock :
- 20,623
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.5W Tc
- Factory Lead Time :
- 6 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Weight :
- 371.1027mg
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Number of Elements :
- 1
- Power Dissipation :
- 1.5W
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- QFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- Current Rating :
- 350mA
- Vgs (Max) :
- ±30V
- Length :
- 4.9mm
- Rds On (Max) @ Id, Vgs :
- 5.3 Ω @ 175mA, 10V
- Drain to Source Breakdown Voltage :
- 500V
- Rise Time :
- 25ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Voltage - Rated DC :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tc
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Element Configuration :
- Single
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 350mA
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 10 ns
- Published :
- 2001
- Fall Time (Typ) :
- 25 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 8mm
- Width :
- 3.9mm
- Turn On Delay Time :
- 6 ns
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Datasheets
- FQNL2N50BTA

N-Channel Tape & Box (TB) 5.3 Ω @ 175mA, 10V ±30V 230pF @ 25V 8nC @ 10V TO-226-3, TO-92-3 Long Body (Formed Leads)
FQNL2N50BTA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 230pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FQNL2N50BTA Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 10 ns
FQNL2N50BTA Applications
There are a lot of ON Semiconductor
FQNL2N50BTA applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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