FQD7P20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.6mm

Power Dissipation :

2.5W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Continuous Drain Current (ID) :

5.7mA

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain to Source Breakdown Voltage :

-200V

Factory Lead Time :

4 Weeks

Power Dissipation-Max :

2.5W Ta 55W Tc

Terminal Form :

Gull wing

Voltage - Rated DC :

-200V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Fall Time (Typ) :

42 ns

Radiation Hardening :

No

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

FET Type :

P-Channel

Voltage :

150V

Current Rating :

-5.7A

Contact Plating :

Tin

Rise Time :

110ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Turn On Delay Time :

15 ns

Resistance :

690mOhm

Published :

2000

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 25V

Series :

QFET®

Height :

2.3mm

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

200V

Avalanche Energy Rating (Eas) :

570 mJ

Turn-Off Delay Time :

30 ns

REACH SVHC :

No SVHC

Current :

13A

JESD-609 Code :

e3

Number of Terminations :

2

Mounting Type :

Surface Mount

Number of Pins :

3

Width :

6.1mm

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.85A, 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-5V

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

5 V

Transistor Element Material :

SILICON