FQD4P25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Terminal Position :

Single

Series :

QFET®

Avalanche Energy Rating (Eas) :

280 mJ

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

250V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

250V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

3.1A

Transistor Element Material :

SILICON

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Terminal Finish :

Tin (Sn)

Published :

2000

Pulsed Drain Current-Max (IDM) :

12.4A

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 1.55A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

2.5W Ta 45W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Elements :

1

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Number of Terminations :

2

Mounting Type :

Surface Mount