FJV992PMTF
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- Mfr.Part #
- FJV992PMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A SOT23-3
- Stock
- 2,216
- In Stock ：
- 2,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transition Frequency :
- 50MHz
- Current Rating :
- -50mA
- Collector Base Voltage (VCBO) :
- -120V
- Length :
- 2.9mm
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -120V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- PNP
- Base Part Number :
- FJV992
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Height :
- 1.04mm
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Collector Current :
- 50mA
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- RoHS Compliant
- Weight :
- 30mg
- Collector Emitter Saturation Voltage :
- -300mV
- JESD-609 Code :
- e3
- Published :
- 2004
- Width :
- 1.3mm
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 120V
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Datasheets
- FJV992PMTF
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV992PMTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -50mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 120V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
FJV992PMTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 50MHz
FJV992PMTF Applications
There are a lot of ON Semiconductor
FJV992PMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJV92MTF | onsemi | 27,173 | TRANS PNP 350V 0.5A SOT23-3 |
| FJV92MTF | onsemi | 37,347 | TRANS PNP 350V 0.5A SOT23-3 |
| FJV992FMTF | onsemi | 5,626 | TRANS PNP 120V 0.05A SOT23-3 |
| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
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