FJV992FMTF
- Mfr.Part #
- FJV992FMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A SOT23-3
- Stock
- 5,626
- In Stock :
- 5,626
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- Width :
- 1.3mm
- Factory Lead Time :
- 13 Weeks
- Voltage - Rated DC :
- -120V
- Max Power Dissipation :
- 300mW
- Weight :
- 30mg
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Length :
- 2.9mm
- Frequency :
- 50MHz
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- hFE Min :
- 200
- Collector Emitter Voltage (VCEO) :
- 120V
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 120V
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 50mA
- Element Configuration :
- Single
- Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Base Part Number :
- FJV992
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Collector Emitter Saturation Voltage :
- -300mV
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 120V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 6V
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- -120V
- Number of Terminations :
- 3
- Published :
- 2004
- Height :
- 1.04mm
- Transistor Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- -50mA
- Datasheets
- FJV992FMTF

PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV992FMTF Overview
This device has a DC current gain of 300 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 50mA volts is possible.
FJV992FMTF Features
the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 50MHz
FJV992FMTF Applications
There are a lot of ON Semiconductor
FJV992FMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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