FGH30N6S2D

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Mfr.Part #
FGH30N6S2D
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 45A 167W TO247
Stock
38,205
In Stock :
38,205

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Input Type :
Standard
Element Configuration :
Single
Supplier Device Package :
TO-247-3
Max Collector Current :
45A
Mount :
Through Hole
Max Operating Temperature :
150°C
Collector Emitter Saturation Voltage :
2.5V
Power Dissipation :
167W
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 12A
Package / Case :
TO-247-3
Test Condition :
390V, 12A, 10Ohm, 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Max Power Dissipation :
167W
Collector Emitter Voltage (VCEO) :
600V
Rise Time :
17ns
Gate Charge :
23nC
REACH SVHC :
No SVHC
Polarity :
NPN
Reverse Recovery Time :
46 ns
Min Operating Temperature :
-55°C
Current - Collector Pulsed (Icm) :
108A
Current Rating :
45A
Power - Max :
167W
Td (on/off) @ 25°C :
6ns/40ns
Mounting Type :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
600V
Switching Energy :
55μJ (on), 100μJ (off)
Packaging :
Tube
Current - Collector (Ic) (Max) :
45A
Collector Emitter Breakdown Voltage :
600V
Voltage - Rated DC :
600V
Number of Pins :
3
RoHS Status :
RoHS Compliant
Datasheets
FGH30N6S2D
Introducing Transistors - IGBTs - Single onsemi FGH30N6S2D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, FGH30N6S2D pinout, FGH30N6S2D datasheet PDF, FGH30N6S2D amp .Beyond Transistors - IGBTs - Single onsemi FGH30N6S2D ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH30N6S2D


FGH30N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH30N6S2D  Description

The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, and Low Plateau Voltage SMPS II IGBTs combine the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times, and UIS capability are essential.



FGH30N6S2D  Features

100kHz Operation at 390V, 14A

200kHZ Operation at 390V, 9A

600V Switching SOA Capability

Typical Fall Time. ........90nsatTJ= 125%C

Low Gate Charge... 23nC at Vce= 15V

Low Plateau Village ......... .6.5V Typical

UIS Rated

150mJ

Low Conduction Loss



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