FF50R12RT4HOSA1
- Mfr.Part #
- FF50R12RT4HOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 50A 285W
- Stock
- 970
- In Stock :
- 970
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- NTC Thermistor :
- No
- Input Capacitance (Cies) @ Vce :
- 2.8nF @ 25V
- Configuration :
- Half Bridge
- Terminal Position :
- UPPER
- Pin Count :
- 7
- IGBT Type :
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Number of Elements :
- 2
- Turn On Time :
- 185 ns
- Turn Off Time-Nom (toff) :
- 490 ns
- Element Configuration :
- Dual
- Current - Collector (Ic) (Max) :
- 50A
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 50A
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Package / Case :
- Module
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1mA
- Halogen Free :
- Not Halogen Free
- Power - Max :
- 285W
- Transistor Application :
- POWER CONTROL
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Chassis Mount
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 5
- JESD-30 Code :
- R-XUFM-X5
- Operating Temperature :
- -40°C~150°C TJ
- Input :
- Standard
- Datasheets
- FF50R12RT4HOSA1

FF50R12RT4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FF50R12RT4HOSA1 Description
The FF50R12RT4HOSA1 is a 34mm module with fas Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode.
FF50R12RT4HOSA1 Features
-
Extended Operation Temperature Tvjop
-
Low Switching Losses
-
Low VcEsat
-
Tvjop= 150°C
-
VcEsat with a positive Temperature Coefficient
-
Isolated Base Plate
-
Standard Housing
FF50R12RT4HOSA1 Applications
-
High Power Converters
-
Motor Drives
-
UPS Systems
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