FF11MR12W1M1B11BOMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Published :

2008

Packaging :

Tray

Vgs(th) (Max) @ Id :

5.55V @ 40mA

FET Feature :

Silicon Carbide (SiC)

Continuous Drain Current (ID) :

100A

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

Not Applicable

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

7950pF @ 800V

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

25.1 ns

Package / Case :

Module

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

11m Ω @ 100A, 15V

Number of Terminations :

18

Manufacturer Package Identifier :

AG-EASY1BM-2

Terminal Form :

UNSPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 15V

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Height :

12.35mm

Series :

CoolSiC™+

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

2

JESD-30 Code :

R-XUFM-X18

Power Dissipation :

20mW

Terminal Position :

UPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

64.3 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)