FDS6673BZ
- Mfr.Part #
- FDS6673BZ
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 14.5A 8SOIC
- Stock
- 51,057
- In Stock :
- 51,057
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±25V
- FET Type :
- P-Channel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Ta
- Power Dissipation :
- 2.5W
- JESD-609 Code :
- e4
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Threshold Voltage :
- -1.9V
- Weight :
- 130mg
- Fall Time (Typ) :
- 105 ns
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Resistance :
- 7.8mOhm
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- -30V
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Lead Free :
- Lead Free
- Width :
- 4mm
- Height :
- 1.5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 14.5mA
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 2.5W Ta
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2009
- Gate Charge (Qg) (Max) @ Vgs :
- 124nC @ 10V
- Nominal Vgs :
- 1.9 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 225 ns
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 14.5A, 10V
- Element Configuration :
- Single
- Rise Time :
- 16ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Terminations :
- 8
- Turn On Delay Time :
- 14 ns
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Feedback Cap-Max (Crss) :
- 900 pF
- Contact Plating :
- Tin
- Length :
- 5mm
- Datasheets
- FDS6673BZ

P-Channel Tape & Reel (TR) 7.8m Ω @ 14.5A, 10V ±25V 4700pF @ 15V 124nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6673BZ Description
FDS6673BZ P-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on) together with an optimized BVDSS capability. FDS6673BZ MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDS6673BZ ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDS6673BZ Features
Extended VGS range for battery applications
HBM ESD protection
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
FDS6673BZ Applications
Control Switch
Synchronous & Non-Synchronous Buck
Load Switch
Inverter
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