FDMS8670S
- Mfr.Part #
- FDMS8670S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A/42A 8PQFN
- Stock
- 7,243
- In Stock :
- 7,243
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 37 ns
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current Rating :
- 42A
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 20A
- Rise Time :
- 19ns
- Lead Free :
- Lead Free
- Number of Terminations :
- 5
- Pbfree Code :
- yes
- Weight :
- 68.1mg
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Resistance :
- 3.5mOhm
- Voltage - Rated DC :
- 30V
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 18 Weeks
- REACH SVHC :
- No SVHC
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PDSO-F5
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 10 ns
- Continuous Drain Current (ID) :
- 42A
- Package / Case :
- 8-PowerTDFN
- Pulsed Drain Current-Max (IDM) :
- 200A
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®, SyncFET™
- Number of Pins :
- 8
- Threshold Voltage :
- 1.5V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 2.5W Ta 78W Tc
- Turn On Delay Time :
- 14 ns
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 42A Tc
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDMS8670S

N-Channel Tape & Reel (TR) 3.5m Ω @ 20A, 10V ±20V 4000pF @ 15V 73nC @ 10V 8-PowerTDFN
FDMS8670S Description
The FDMS8670S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS8670S Features
-
Maximum RDS(on) = 3.5mΩ at VGS = 10V, ID = 20A
-
Maximum RDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
SyncFET Schottky Body Diode
-
MSL1 robust package design
-
RoHS Compliant
FDMS8670S Applications
-
This product is general usage and suitable for many different applications.
-
Synchronous Rectifier for DC/DC Converters
-
Notebook Vcore/GPU low side switch
-
Networking Point of Load low side switch
-
Telecom secondary side rectification
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