FDMS3604S
- Mfr.Part #
- FDMS3604S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 13A/23A POWER56
- Stock
- 31,893
- In Stock :
- 31,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Package / Case :
- 8-PowerTDFN
- Number of Terminations :
- 6
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-N6
- Turn On Delay Time :
- 13 ns
- Width :
- 5mm
- Length :
- 6mm
- ECCN Code :
- EAR99
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 31 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 13A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1785pF @ 15V
- Factory Lead Time :
- 13 Weeks
- Rise Time :
- 4.8ns
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 13A 23A
- FET Feature :
- Logic Level Gate
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.7V @ 250μA
- Height :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 40A
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Case Connection :
- DRAIN SOURCE
- Fall Time (Typ) :
- 3.4 ns
- Terminal Form :
- NO LEAD
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain Current-Max (Abs) (ID) :
- 13A
- Continuous Drain Current (ID) :
- 23A
- Number of Elements :
- 2
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 171mg
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Datasheets
- FDMS3604S

FDMS3604S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3604S Description
FDMS3604S is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3604S Features
-
Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A
-
Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A
-
Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A
-
Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A
-
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
-
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
-
This Device is Pb?Free and is RoHS Compliant
FDMS3604S Applications
-
Computing
-
Communications
-
General Purpose Point of Load
-
Notebook VCORE
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