FDMS3604S

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Mfr.Part #
FDMS3604S
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET 2N-CH 30V 13A/23A POWER56
Stock
31,893
In Stock :
31,893

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Pbfree Code :
yes
Package / Case :
8-PowerTDFN
Number of Terminations :
6
Element Configuration :
Single
Transistor Element Material :
SILICON
JESD-30 Code :
R-PDSO-N6
Turn On Delay Time :
13 ns
Width :
5mm
Length :
6mm
ECCN Code :
EAR99
Series :
PowerTrench®
Turn-Off Delay Time :
31 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
8m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1785pF @ 15V
Factory Lead Time :
13 Weeks
Rise Time :
4.8ns
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
13A 23A
FET Feature :
Logic Level Gate
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
2.7V @ 250μA
Height :
1mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
Number of Pins :
8
Drain to Source Breakdown Voltage :
30V
Transistor Application :
SWITCHING
Max Power Dissipation :
1W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
40A
FET Type :
2 N-Channel (Dual) Asymmetrical
Case Connection :
DRAIN SOURCE
Fall Time (Typ) :
3.4 ns
Terminal Form :
NO LEAD
Avalanche Energy Rating (Eas) :
40 mJ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Drain Current-Max (Abs) (ID) :
13A
Continuous Drain Current (ID) :
23A
Number of Elements :
2
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Weight :
171mg
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Datasheets
FDMS3604S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDMS3604S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Terminations:6, Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDMS3604S pinout, FDMS3604S datasheet PDF, FDMS3604S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDMS3604S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS3604S


FDMS3604S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMS3604S Description


FDMS3604S is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.



FDMS3604S Features


  • Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A

  • Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A

  • Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A

  • Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A

  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses

  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing

  • This Device is Pb?Free and is RoHS Compliant



FDMS3604S Applications


  • Computing

  • Communications

  • General Purpose Point of Load

  • Notebook VCORE


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