FDC638APZ
- Mfr.Part #
- FDC638APZ
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.5A SUPERSOT6
- Stock
- 306,800
- In Stock :
- 306,800
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Height :
- 1.1mm
- Published :
- 2006
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 4.5A, 4.5V
- Length :
- 3mm
- Continuous Drain Current (ID) :
- -4.5A
- Factory Lead Time :
- 13 Weeks
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 6 ns
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±12V
- Fall Time (Typ) :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Ta
- Max Junction Temperature (Tj) :
- 150°C
- Voltage - Rated DC :
- -12V
- Threshold Voltage :
- -800mV
- Drain to Source Breakdown Voltage :
- -20V
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 20A
- Number of Terminations :
- 6
- Power Dissipation :
- 1.6W
- Termination :
- SMD/SMT
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 12V
- Pbfree Code :
- yes
- Number of Channels :
- 1
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Dual Supply Voltage :
- -20V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 6
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 1.6W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Weight :
- 36mg
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- ECCN Code :
- EAR99
- Width :
- 1.7mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- -4.5A
- Number of Elements :
- 1
- Resistance :
- 43mOhm
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 48 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 20V
- Rise Time :
- 20ns
- Transistor Element Material :
- SILICON
- Datasheets
- FDC638APZ

P-Channel Tape & Reel (TR) 43m Ω @ 4.5A, 4.5V ±12V 1000pF @ 10V 12nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
FDC638APZ Description
FDC638APZ is a type of P-channel PowerTrench? MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to provide low on-state resistance while maintaining a fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for load switching and power management, battery charging circuits, and DC/DC conversion.
FDC638APZ Features
-
Low gate charge
-
Low RDS (on)
-
Low on-state resistance
-
Superior switching performance
-
Available in the SuperSOT-6 package
FDC638APZ Applications
-
Load switching
-
Power management
-
Battery charging circuits
-
DC/DC conversion
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