ECH8667-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Pulsed Drain Current-Max (IDM) :

40A

Turn On Delay Time :

7.2 ns

Fall Time (Typ) :

42 ns

Length :

2.9mm

Number of Elements :

2

Surface Mount :

yes

Number of Pins :

8

Max Power Dissipation :

1.5W

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Finish :

Tin/Bismuth (Sn/Bi)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.5W

Package / Case :

8-SMD, Flat Lead

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Factory Lead Time :

2 Weeks

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

39m Ω @ 2.5A, 10V

JESD-609 Code :

e6

Pbfree Code :

yes

Published :

2010

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Width :

2.3mm

Height :

900μm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

5.5A

Pin Count :

8

Halogen Free :

Halogen Free

Drain-source On Resistance-Max :

0.039Ohm

Turn-Off Delay Time :

63 ns

Gate to Source Voltage (Vgs) :

20V

Rise Time :

23ns