DZT955-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

1W

Radiation Hardening :

No

Terminal Position :

Dual

Width :

3.5mm

Weight :

7.994566mg

Pin Count :

4

Number of Pins :

4

Collector Emitter Voltage (VCEO) :

140V

Vce Saturation (Max) @ Ib, Ic :

370mV @ 300mA, 3A

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

180V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

6V

Frequency :

150MHz

Max Collector Current :

4A

Power Dissipation :

1W

Collector Emitter Breakdown Voltage :

140V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Base Part Number :

DZT955

Gain Bandwidth Product :

150MHz

Max Breakdown Voltage :

140V

Current - Collector Cutoff (Max) :

50nA ICBO

Length :

6.5mm

Height :

1.6mm

Terminal Form :

Gull wing

Transistor Type :

PNP

Number of Terminations :

4

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Element Configuration :

Single

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

150MHz

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)