DSS8110Y-7
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- Mfr.Part #
- DSS8110Y-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT363
- Stock
- 5,587
- In Stock ：
- 5,587
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 6
- Max Collector Current :
- 1A
- Number of Terminations :
- 6
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Collector Base Voltage (VCBO) :
- 120V
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 80
- Pin Count :
- 6
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 100V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 200mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 1A
- Published :
- 2010
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 625mW
- Datasheets
- DSS8110Y-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
DSS8110Y-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 100mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
DSS8110Y-7 Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS8110Y-7 Applications
There are a lot of Diodes Incorporated
DSS8110Y-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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