DSS5540X-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Published :

2016

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Max Breakdown Voltage :

40V

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

-6V

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

-40V

Gain Bandwidth Product :

60MHz

Package / Case :

TO-243AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Pbfree Code :

yes

Max Collector Current :

4A

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

375mV

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Continuous Collector Current :

-4A

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

900mW

Transistor Application :

SWITCHING

Number of Elements :

1

Mount :

Surface Mount

Number of Pins :

4

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

375mV @ 500mA, 5A

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Pin Count :

3

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-F3

Collector Emitter Breakdown Voltage :

40V

Transition Frequency :

60MHz

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

15 Weeks

Transistor Type :

PNP

Element Configuration :

Single

Power - Max :

900mW

Terminal Form :

Flat