DSS30101L-7
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- Mfr.Part #
- DSS30101L-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SOT23-3
- Stock
- 75,595
- In Stock ：
- 75,595
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2004
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 50V
- Continuous Collector Current :
- 1A
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Max Power Dissipation :
- 600mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Base Part Number :
- DSS30101
- Transition Frequency :
- 250MHz
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1A
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Datasheets
- DSS30101L-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS30101L-7 Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
DSS30101L-7 Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
DSS30101L-7 Applications
There are a lot of Diodes Incorporated
DSS30101L-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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