DSS2515M-7B
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- Mfr.Part #
- DSS2515M-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.5A 3DFN
- Stock
- 76
- In Stock ：
- 76
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- DSS2515M
- Max Breakdown Voltage :
- 15V
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 250MHz
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 15V
- Number of Pins :
- 3
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 15V
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Max Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e4
- Continuous Collector Current :
- 500mA
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- 3-UFDFN
- Published :
- 2011
- Collector Base Voltage (VCBO) :
- 15V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Element Configuration :
- Single
- Datasheets
- DSS2515M-7B
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
DSS2515M-7B Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 500mA volts is possible.
DSS2515M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
DSS2515M-7B Applications
There are a lot of Diodes Incorporated
DSS2515M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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