DMP2060UFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

3.2A

Case Connection :

DRAIN

Package / Case :

6-UDFN Exposed Pad

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N6

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2015

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation :

1.4W

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.9A, 4.5V

FET Feature :

Standard

Number of Terminations :

6

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e4

Factory Lead Time :

6 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

881pF @ 10V

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Power - Max :

1.4W

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 8V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain-source On Resistance-Max :

0.09Ohm