DMN1029UFDB-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 4.5V

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

914pF @ 6V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

Power - Max :

1.4W

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Factory Lead Time :

15 Weeks

JESD-30 Code :

S-PDSO-N6

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.029Ohm

Continuous Drain Current (ID) :

5.6A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

12V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

6-UDFN Exposed Pad

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

JESD-609 Code :

e4

Drain to Source Voltage (Vdss) :

12V

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.4W

Published :

2015

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 8V