DMG1026UVQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101

Factory Lead Time :

16 Weeks

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

440mA Ta

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

32pF @ 25V

Package / Case :

SOT-563, SOT-666

Power - Max :

650mW

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-F6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

0.45pC @ 4.5V

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

60V

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.38A

ECCN Code :

EAR99