DMC6040SSDQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.24W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

20.8nC @ 30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Additional Feature :

High Reliability

Terminal Form :

Gull wing

FET Feature :

Standard

Transistor Element Material :

SILICON

FET Type :

N and P-Channel Complementary

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 15V

Drain-source On Resistance-Max :

0.04Ohm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

40m Ω @ 8A, 10V

Continuous Drain Current (ID) :

5.1A

Mount :

Surface Mount

Factory Lead Time :

23 Weeks

DS Breakdown Voltage-Min :

60V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)