DF80R12W2H3FB11BPSA1

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Mfr.Part #
DF80R12W2H3FB11BPSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 20A 20MW
Stock
12
In Stock :
12

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Factory Lead Time :
16 Weeks
NTC Thermistor :
yes
Case Connection :
Isolated
Mounting Type :
Chassis Mount
Vce(on) (Max) @ Vge, Ic :
1.7V @ 15V, 20A
JESD-30 Code :
R-XUFM-X22
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Number of Elements :
2
Published :
2002
Current - Collector Cutoff (Max) :
1mA
Series :
EconoPACK™2
ECCN Code :
EAR99
Terminal Position :
UPPER
Number of Terminations :
22
Input Capacitance (Cies) @ Vce :
2.35nF @ 25V
Power - Max :
20mW
Input :
Standard
Current - Collector (Ic) (Max) :
20A
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Turn Off Time-Nom (toff) :
375 ns
Turn On Time :
40 ns
Transistor Application :
POWER CONTROL
Configuration :
Half Bridge
Package / Case :
Module
Operating Temperature :
-40°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
Terminal Form :
UNSPECIFIED
Voltage - Collector Emitter Breakdown (Max) :
1200V
Introducing Transistors - IGBTs - Modules Infineon Technologies DF80R12W2H3FB11BPSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:22, Package / Case:Module, Operating Temperature:-40°C~150°C TJ, DF80R12W2H3FB11BPSA1 pinout, DF80R12W2H3FB11BPSA1 datasheet PDF, DF80R12W2H3FB11BPSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies DF80R12W2H3FB11BPSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies DF80R12W2H3FB11BPSA1


DF80R12W2H3FB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

DF80R12W2H3FB11BPSA1 Description


FF200R12KE3HOSA1 IGBT module developed by Infineon Technologies is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. IGBT module is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.



DF80R12W2H3FB11BPSA1 Features


Low switching losses

Al2O3 substrate with low thermal resistance

Compact design

CoolSiC(TM) Schottky diode gen 5



DF80R12W2H3FB11BPSA1 Applications


Solar applications


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