CYDD09S36V18-167BBXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

30

Operating Supply Voltage :

1.8V

Radiation Hardening :

No

I/O Type :

COMMON

Operating Temperature :

0°C~70°C TA

Memory Size :

9Mb 128K x 36 x 2

Supply Voltage-Max (Vsup) :

1.58V

Moisture Sensitivity Level (MSL) :

5 (48 Hours)

Output Characteristics :

3-STATE

Packaging :

Tray

Number of Functions :

1

Height Seated (Max) :

1.7mm

Memory Type :

Volatile

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

JESD-609 Code :

e1

Clock Frequency :

167MHz

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Number of Ports :

2

Number of Terminations :

256

Memory Interface :

Parallel

Package / Case :

256-LBGA

Memory Width :

72

Address Bus Width :

34b

Supply Voltage :

1.5V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Memory Format :

SRAM

Pin Count :

256

Pbfree Code :

yes

Density :

9 Mb

Terminal Position :

BOTTOM

Standby Voltage-Min :

1.5V

Access Time :

600ps

Word Size :

36b

Sync/Async :

SYNCHRONOUS

RoHS Status :

ROHS3 Compliant

Length :

17mm

Published :

2006

Base Part Number :

CYDD

Nominal Supply Current :

560mA

Number of Pins :

256

Terminal Pitch :

1mm

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V