CY7C1911KV18-250BZC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Mounting Type :

Surface Mount

Address Bus Width :

19b

RoHS Status :

Non-RoHS Compliant

Voltage - Supply :

1.7V~1.9V

Output Characteristics :

3-STATE

Memory Width :

9

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

SRAM

JESD-609 Code :

e0

Standby Voltage-Min :

1.7V

Package / Case :

165-LBGA

Packaging :

Tray

Memory Interface :

Parallel

Operating Temperature :

0°C~70°C TA

Number of Terminations :

165

Nominal Supply Current :

430mA

Factory Lead Time :

15 Weeks

Published :

2003

Clock Frequency :

250MHz

Peak Reflow Temperature (Cel) :

235

Number of Functions :

1

Terminal Pitch :

1mm

Time@Peak Reflow Temperature-Max (s) :

20

Memory Size :

18Mb 2M x 9

Sync/Async :

SYNCHRONOUS

Height Seated (Max) :

1.4mm

Base Part Number :

CY7C1911

Supply Voltage-Min (Vsup) :

1.7V

Supply Voltage :

1.8V

Memory Type :

Volatile

Word Size :

9b

Length :

15mm

Pin Count :

165

Number of Ports :

2

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Surface Mount

Number of Pins :

165

Access Time :

450 ps

Density :

18 Mb

Terminal Position :

BOTTOM

Operating Supply Voltage :

1.8V

I/O Type :

Separate

Supply Voltage-Max (Vsup) :

1.9V

Radiation Hardening :

No