CSD25304W1015T
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- Mfr.Part #
- CSD25304W1015T
- Manufacturer
- Texas Instruments
- Package / Case
- 6-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A 6DSBGA
- Stock
- 982
- In Stock ：
- 982
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Weight :
- 1.700971mg
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 8V
- Power Dissipation-Max :
- 750mW Ta
- Length :
- 1.5mm
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 595pF @ 10V
- Lead Free :
- Lead Free
- Rise Time :
- 4ns
- Rds On (Max) @ Id, Vgs :
- 32.5mOhm @ 1.5A, 4.5V
- Series :
- NexFET™
- Mount :
- Surface Mount
- Threshold Voltage :
- -800mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 6-UFBGA, DSBGA
- Width :
- 1.8mm
- Element Configuration :
- Single
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 32.5 mΩ
- Vgs(th) (Max) @ Id :
- 1.15V @ 250μA
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 3A
- Base Part Number :
- CSD25304
- Height :
- 1mm
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 24 ns
- Fall Time (Typ) :
- 10 ns
- Vgs (Max) :
- ±8V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- REACH SVHC :
- No SVHC
- Drain to Source Resistance :
- 92mOhm
- Supplier Device Package :
- 6-DSBGA
- Drain to Source Breakdown Voltage :
- -20V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.4nC @ 4.5V
- Input Capacitance :
- 595pF
- Thickness :
- 2mm
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 6
- Turn On Delay Time :
- 6 ns
- Datasheets
- CSD25304W1015T
P-Channel Tape & Reel (TR) 32.5mOhm @ 1.5A, 4.5V ±8V 595pF @ 10V 4.4nC @ 4.5V 20V 6-UFBGA, DSBGA
CSD25304W1015T Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 595pF @ 10V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 24 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 92mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has -800mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
CSD25304W1015T Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 92mOhm
a threshold voltage of -800mV
a 20V drain to source voltage (Vdss)
CSD25304W1015T Applications
There are a lot of Texas Instruments
CSD25304W1015T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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