CSD23202W10

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

12V

Transistor Element Material :

SILICON

Width :

0m

Number of Terminations :

4

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Feedback Cap-Max (Crss) :

37 pF

Fall Time (Typ) :

21 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

58 ns

Continuous Drain Current (ID) :

2.2A

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-12V

Terminal Position :

BOTTOM

Rise Time :

4ns

Transistor Application :

SWITCHING

Base Part Number :

CSD23202

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 6V

Power Dissipation :

1W

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

900mV @ 250μA

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

-6V

Series :

NexFET™

Height :

625μm

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

53m Ω @ 500mA, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Terminal Form :

Ball

Element Configuration :

Single

Package / Case :

4-UFBGA, DSBGA

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

6V

Peak Reflow Temperature (Cel) :

260

Thickness :

650μm

Power Dissipation-Max :

1W Ta

Lead Free :

Lead Free

Length :

0m

Number of Pins :

4

Mounting Type :

Surface Mount