CSD23201W10

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Threshold Voltage :

600mV

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

Terminal Position :

BOTTOM

Base Part Number :

CSD23201

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

29 ns

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 6V

Continuous Drain Current (ID) :

2.2A

Pbfree Code :

No

Power Dissipation-Max :

1W Ta

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

12V

Contact Plating :

Copper, Silver, Tin

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Mounting Type :

Surface Mount

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Dual Supply Voltage :

12V

Transistor Element Material :

SILICON

Power Dissipation :

1W

Pin Count :

4

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

82m Ω @ 500mA, 4.5V

FET Type :

P-Channel

Radiation Hardening :

No

Turn On Delay Time :

24 ns

Series :

NexFET™

Nominal Vgs :

600 mV

Package / Case :

4-UFBGA, DSBGA

Number of Pins :

4

JESD-609 Code :

e1

Rise Time :

19ns

Gate to Source Voltage (Vgs) :

-6V

Turn-Off Delay Time :

68 ns

Terminal Form :

Ball