CSD19531Q5AT
- Mfr.Part #
- CSD19531Q5AT
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A 8VSON
- Stock
- 85,731
- In Stock :
- 85,731
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- CSD19531
- Pulsed Drain Current-Max (IDM) :
- 337A
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Number of Channels :
- 1
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 5
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 4.9mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3870pF @ 50V
- Terminal Position :
- Dual
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 16A, 10V
- Power Dissipation-Max :
- 3.3W Ta 125W Tc
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Turn-Off Delay Time :
- 18.4 ns
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Thickness :
- 1mm
- Factory Lead Time :
- 8 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Vgs(th) (Max) @ Id :
- 3.3V @ 250μA
- Drain to Source Breakdown Voltage :
- 100V
- Terminal Form :
- NO LEAD
- Fall Time (Typ) :
- 5.2 ns
- Rise Time :
- 5.8ns
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 100A
- Width :
- 6mm
- Package / Case :
- 8-PowerTDFN
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Threshold Voltage :
- 2.7V
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Turn On Delay Time :
- 6 ns
- Height :
- 1.1mm
- Series :
- NexFET™
- Datasheets
- CSD19531Q5AT

N-Channel Tape & Reel (TR) 6.4m Ω @ 16A, 10V ±20V 3870pF @ 50V 48nC @ 10V 8-PowerTDFN
CSD19531Q5AT Description
CSD19531Q5AT emerges as an N-Channel NexFET? Power MOSFET featuring ultra-low Qg and Qgd, and low thermal resistance. As a result, it is well suited for motor control, DC-DC conversion, synchronous rectification, and isolated converter primary-side switch.
CSD19531Q5AT Features
-
Logic level
-
Ultra-low Qg and Qgd
-
Low-thermal resistance
-
Available in the SON plastic package
CSD19531Q5AT Applications
-
Motor control
-
Primary side telecom
-
Secondary side synchronous rectifier
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