CSD18510Q5B

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

Drain Current-Max (Abs) (ID) :

42A

JESD-609 Code :

e4

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

156W Tc

Gate Charge (Qg) (Max) @ Vgs :

153nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 20V

Feedback Cap-Max (Crss) :

551 pF

Number of Elements :

1

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

300A Tc

FET Type :

N-Channel

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Width :

6mm

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

0.96m Ω @ 32A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Element Configuration :

Single

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

40V

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Drain-source On Resistance-Max :

0.0016Ohm

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Base Part Number :

CSD18510

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Terminal Form :

NO LEAD

Series :

NexFET™

Thickness :

950μm

Length :

5mm

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual