CSD17506Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Pins :

8

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Pin Count :

8

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Element Configuration :

Single

Pbfree Code :

yes

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0053Ohm

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Series :

NexFET™

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Nominal Vgs :

1.3 V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 15V

Turn-Off Delay Time :

13 ns

Fall Time (Typ) :

5.3 ns

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7.5 ns

Width :

6mm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3.2W

Power Dissipation-Max :

3.2W Ta

Rise Time :

13ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

Drain Current-Max (Abs) (ID) :

23A

Height :

1.1mm

Threshold Voltage :

1.3V

Mount :

Surface Mount

Radiation Hardening :

No

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

65 pF

Continuous Drain Current (ID) :

100A

Transistor Element Material :

SILICON

Base Part Number :

CSD17506

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

Package / Case :

8-PowerTDFN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Avalanche Energy Rating (Eas) :

259 mJ

Thickness :

1mm

REACH SVHC :

No SVHC

Length :

4.9mm